MiniMOS series are high performance, low on-resistance, high reliability power MOSFET devices.
This document is a Designer's Data Sheet for the Motorola MMSF5N03HD, a single N-Channel Field Effect Transistor (FET) from the MiniMOS™ series. These devices utilize Motorola's High Cell Density (HDTMOS) process and are designed for low voltage, high speed switching applications where power efficiency is critical.
The datasheet provides comprehensive specifications including maximum ratings such as a 30V drain-to-source voltage and 6.5A continuous drain current. It details electrical characteristics like on-resistance, switching times, and gate charge, along with typical electrical performance graphs for on-region characteristics, transfer characteristics, and capacitance variation.
| Drain-to-Source Voltage | 30 Vdc |
|---|---|
| Continuous Drain Current @ 25°C | 6.5 Adc |
| Total Power Dissipation @ 25°C | 25 Watts |
| Operating Temperature Range | -55 to 150 °C |
| Turn-On Delay Time | 20 ns |
| Reverse Recovery Time | 33 ns |
Yes, the device features true logic level performance and can be driven by logic ICs.
The device supports a continuous drain current of 6.5 Amperes at 25°C.
The maximum drain-to-source voltage is 30 Volts.
The total power dissipation is 25 Watts when the ambient temperature is 25°C.