MiniMOS series devices utilize Motorola's High Cell Density HDTMOS process and feature ultra low RDS(on) and true logic level performance.
This document is a Designer's Data Sheet for the Motorola MMSF5N03HD, a medium power surface mount product in the MiniMOS™ series of TMOS Single N-Channel Field Effect Transistors. These devices utilize Motorola's High Cell Density HDTMOS process and are designed for low voltage, high speed switching applications where power efficiency is important.
| Drain-to-Source Voltage | 30 Vdc |
|---|---|
| Continuous Drain Current @ Ta = 25°C | 6.5 Adc |
| Total Power Dissipation @ Ta = 25°C | 25 Watts |
| Operating and Storage Temperature Range | -55 to 150 °C |
| Single Pulse Drain-to-Source Avalanche Energy | 450 mJ |
| Thermal Resistance Junction to Ambient | 50 oc |
The typical static drain-source on-resistance is 0.040 Ohms when Vgs = 10 Vdc and Id = 5.0 Adc.
The maximum gate threshold voltage is 3.0 Vdc when Vds = Vgs and Id = 250 uAdc.
The maximum lead temperature for soldering purposes is 260 °C, measured 1/8" from case for 10 seconds.