This document describes the FQPF2P25 250V P-Channel MOSFET product, which is a P-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary DMOS technology. The product features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it well suited for high efficiency switching DC/DC converters.
The FQPF2P25 is a P‑Channel enhancement mode power MOSFET designed for high‑efficiency DC/DC converters. It features low gate charge (typical 6.5 nC), low output capacitance (typical 6.5 pF), fast switching, and 100 % avalanche testing for reliable operation under high‑energy pulses.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions (TO‑220F). It also includes trademark, disclaimer, and product‑status information from Fairchild Semiconductor.
| Drain‑Source Voltage (VDS) | -250 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | -1.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 32 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.9 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of -250 V.
It can conduct up to -1.8 A continuously at a case temperature of 25 °C.
The MOSFET is supplied in a TO‑220F package.