FQPF2P25 is a P-channel MOSFET produced by Fairchild with low on-state resistance, fast switching speed, and high energy pulse withstand capability.
The FQPF2P25 is a P‑Channel enhancement mode power MOSFET designed for high‑efficiency DC/DC converters. It features low gate charge (typical 6.5 nC), low output capacitance (typical 6.5 pF), fast switching, and 100 % avalanche testing for reliable operation.
The datasheet provides absolute maximum ratings, thermal characteristics, detailed electrical parameters (on/off characteristics, dynamic and switching behavior), diode specifications, typical characteristic curves, and package dimensions (TO‑220F). It also includes trademark, disclaimer, life‑support policy, and product status information.
| Drain‑Source Voltage (V_DSS) | -250 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -1.8 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) at 25 °C | 32 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.9 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
The device can handle a continuous drain current of -1.8 A at a case temperature of 25 °C.
It is supplied in a TO‑220F package.
The single pulsed avalanche energy is rated at 120 mJ.
The device is rated for operation from –55 °C to +150 °C.