FQPF2NA90 is a 900V N-Channel MOSFET power field effect transistor produced using Fairchild's proprietary technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it suitable for high efficiency switch mode power supplies.
The FQPF2NA90 is a 900 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche capability.
Key features include a continuous drain current of 17 A at 25 °C, a gate‑source rating of +30 V, typical on‑resistance of 5‑8 mΩ at Vgs = 10 V, low gate charge (≈15 nC), and low output capacitance. Thermal resistance values are 3.2 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). The device is supplied in a TO‑220F package.
| Drain-Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 17 A |
| Gate-Source Voltage (VGS) Rating | +30 V |
| Typical On‑Resistance (RDS(on)) | 5‑8 mΩ @ VGS=10 V |
| Thermal Resistance, Junction‑to‑Case | 3.2 °C·W |
| Thermal Resistance, Junction‑to‑Ambient | 62.5 °C·W |
| Gate Charge (Qg) | Typical 15 nC |
| Reverse Transfer Capacitance (Crss) | Typical 6.5 pF |
| Avalanche Rating | 100 % avalanche tested |
The device is rated for a maximum drain‑source voltage of 900 V.
It can conduct up to 17 A continuously at a junction temperature of 25 °C.
The gate‑source voltage rating is +30 V.
Typical on‑resistance is 5‑8 mΩ when VGS is 10 V.