The FQPF2NA90 is a 900V N-channel MOSFET manufactured by Fairchild. Its features are low on-state resistance, low gate charge, low Crss, fast switching, 100% avalanche tested and improved dv/dt capability.
The FQPF2NA90 is a 900 V N‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse handling, making it suitable for high‑efficiency switch‑mode power supplies.
Key specifications include a drain‑source voltage rating of 900 V, continuous drain current of 17 A at 25 °C, pulsed drain current of 6.8 A, gate‑source voltage of +30 V, typical gate charge of 15 nC, and a low output capacitance of 68 pF. The device is packaged in a TO‑220F case and is rated for operation from –55 °C to +150 °C.
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 17 A |
| Pulsed Drain Current (ID) (Note 1) | 6.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Typical Gate Charge (Qg) | 15 nC |
| Rds(on) (typical) | 5‑8 mΩ |
| Output Capacitance (Coss) | 68 pF |
The FQPF2NA90 is rated for a maximum drain‑source voltage of 900 V.
It can conduct up to 17 A continuously at a case temperature of 25 °C.
The typical gate charge is 15 nC.
It is supplied in a TO‑220F package.