2SK2615 is a N-channel MOSFET manufactured by Toshiba. It is mainly used in DC-DC converters, relay drives and motor drives. The product has the characteristics of low on-resistance, high forward transfer admittance and low leakage current.
The Toshiba 28K2615 is an N‑channel silicon MOSFET designed for DC‑DC converter, relay drive and motor drive applications. It features a low drain‑source on‑resistance of 0.28 Ω (typ.) and can handle a drain‑source voltage of up to 60 V.
The device is supplied in a lead‑free ceramic substrate package (25.4 mm × 25.4 mm × 0.8 mm) and is electrostatic‑sensitive, requiring careful handling. It is intended for general electronics use such as computers, office equipment, measuring instruments, industrial robotics and domestic appliances, but is not recommended for safety‑critical or high‑reliability applications.
| Drain‑source voltage (VDS) | 60 V (max) |
|---|---|
| Gate‑source voltage (VGS) | +20 V (max) |
| On‑resistance (RDS(ON)) | 0.28 Ω (typ.) |
| Continuous drain reverse current | 2 A |
| Input capacitance (Ciss) | 150 pF |
| Package dimensions | 25.4 mm × 25.4 mm × 0.8 mm |
| Weight | 0.05 g (typ.) |
The device can withstand a drain‑source voltage of up to 60 V.
Its typical on‑resistance is 0.28 Ω.
It is an electrostatic‑sensitive device; handle with caution and follow the Toshiba Semiconductor Reliability Handbook guidelines.
It is intended for general electronics applications such as computers, office equipment, measuring equipment, industrial robotics, and domestic appliances.