The 28K2615 N‑channel MOSFET is designed for DC‑DC converters, relay drive and motor drive applications. It features a low drain‑source on‑resistance and high forward transfer admittance, making it suitable for general electronics, industrial robotics, and domestic appliances.
Key electrical specifications include a drain‑source voltage rating of 60 V, typical on‑resistance of 0.23 Ω at VGS=10 V, gate threshold voltage of 0.8‑2.0 V, and input/output capacitances of 150 pF/70 pF. The device is an electrostatic‑sensitive component and must be handled with care, following Toshiba’s reliability and handling guidelines.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Continuous drain reverse current | 2 A |
| Input capacitance (Ciss) | 150 pF |
| Output capacitance (Coss) | 70 pF |
The maximum drain‑source voltage is 60 V.