Key facts
- Brand
- STMicroelectronics
- Model
- STB21NM50N
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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ST STP21NM50N/STF21NM50N/STW21NM50N/STB21NM50N/STB21NM50N-1 handbook
This document describes the STx21NM50N family of N-channel MOSFETs, which utilize the second generation of MDmesh Technology. This technology combines a new vertical structure with a strip layout to achieve very low on-resistance and gate charge, making the devices suitable for high-efficiency converters.
Read onlineSTMicroelectronics STB21NM50N specifications
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Continuous drain current (Id) at 25 °C | 18 A |
| Total dissipation (PD) at 25 °C | 140 W |
| Thermal resistance junction‑case (RθJC) | 0.89 °C/W |
| Avalanche current (IAval) | 9 A |
| Total gate charge (Qg) | 65 nC |
| Input capacitance (Ciss) | 1950 pF |
| Output capacitance (Coss) | 420 pF |
Source: STMicroelectronics STP/F21NM50N, STW21NM50N, STB21NM50N, STB21NM50N-1 Datasheet
All STMicroelectronics STB21NM50N documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
From: ST STP21NM50N/STF21NM50N/STW21NM50N/STB21NM50N/STB21NM50N-1 handbook
What is the maximum drain‑source voltage for these MOSFETs?
The maximum drain‑source voltage is 500 V.
From: STMicroelectronics STP/F21NM50N, STW21NM50N, STB21NM50N, STB21NM50N-1 Datasheet
What continuous drain current can the device handle at 25 °C?
The device can handle a continuous drain current of 18 A at 25 °C.
From: STMicroelectronics STP/F21NM50N, STW21NM50N, STB21NM50N, STB21NM50N-1 Datasheet