This document describes the features and characteristics of the STP16NK60Z, STB16NK60Z-S, and STW16NK60Z N-channel 600V SuperMESH MOSFET products, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
This document provides technical specifications for the STP16NK60Z, STB16NK60Z-S, and STW16NK60Z N-Channel MOSFETs. These devices belong to the SuperMESH™ series, which utilizes an optimized strip-based PowerMESH™ layout to achieve low on-resistance and high dv/dt capability. The MOSFETs are designed for high current, high speed switching applications, particularly in off-line power supplies.
Yes, they feature built-in back-to-back Zener diodes to protect against gate-to-source voltage transients.
The maximum continuous drain current is 14 A when the case temperature is 25°C.
The maximum total power dissipation is 190 W at a case temperature of 25°C.
The typical static drain-source on-resistance is 0.38 Ω.