STP16NK60Z-STB16NK60Z-STW16NK60Z Zener-Protected SuperMESH™ MOSFET is a high voltage MOSFET product from ST. Its typical RDS(on) is 0.38 Ω, which is very suitable for high voltage high frequency switching applications.
The SuperMESH™ series MOSFETs from STMicroelectronics provide high‑voltage, high‑current performance with low on‑resistance and excellent dv/dt capability, making them suitable for high‑speed switching and offline power supplies. The series includes three package variants – TO‑220, PSPAK and TO‑247 – each offering the same 600 V rating and 14 A continuous drain current.
Key specifications include a typical on‑resistance of 0.38 Ω, total power dissipation up to 190 W, and built‑in gate‑source Zener diodes (30 V breakdown) for ESD protection. Detailed thermal data, avalanche characteristics, and dynamic parameters such as gate charge (86 nC) and input capacitance (2 650 pF) are provided for design engineers.
| Drain‑source Voltage (Vds) | 600 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 14 A |
| Total Power Dissipation | 190 W |
| Typical On‑Resistance (Rds(on)) | 0.38 Ω |
| Avalanche Energy (Eas) | 360 mJ |
| Thermal Resistance Junction‑Ambient (RθJA) TO‑220 | 62.5 °C/W |
The maximum continuous drain current is 14 A at a case temperature of 25 °C.
The typical on‑resistance (Rds(on)) is 0.38 Ω.