Motorola TMOS Power MOSFET Transistor Device Data introduces the features of MiniMOS series power MOSFETs, including ultra-low RDS(on) and true logic level performance. The products are designed for low voltage, high speed switching applications, capable of withstanding high energy in avalanche and commutation modes, and have very low reverse recovery time of the drain-to-source diode.
This document is a technical data sheet for the Motorola TMOS Power MOSFET Transistor, specifically the S5P02H model from the MiniMOS series. It provides detailed specifications, electrical characteristics, switching parameters, and application information for this medium power surface mount device.
The S5P02H utilizes Motorola's High Cell Density HDTMOS process to offer ultra-low on-resistance (RDS(on)) and true logic-level performance in a miniature SO-8 package. Key features include specified avalanche energy, characterized source-drain diodes for bridge circuits, and suitability for low voltage, high-speed switching applications such as DC-DC converters and power management in portable electronics.
| Drain-to-Source Voltage (Max) | 20 V |
|---|---|
| On-State Drain Current (VDS ≤ 5.0 V, VGS = 4.5 V) | 10 A |
| Static Drain-to-Source On-Resistance (Typical) | 23 mΩ |
| Operating and Storage Temperature Range | -55 to 150 °C |
| Single Pulse Drain-to-Source Avalanche Energy (Max) | 1000 mJ |
The typical static drain-to-source on-resistance (RDS(on)) is 23 mΩ.
Yes, the device features true logic-level performance and can be driven by logic ICs.