Mitsubishi Electric RA30H4552M1 RF Power Module Datasheet

RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to 520-MHz range.


Mitsubishi Electric RA30H4552M1 RF Power Module Datasheet - cover page
Brand
Mitsubishi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
240 KB
Published
21 March, 2012
Updated
30 September, 2023
MD5 checksum
D54BB4E8A5A129A643760CC33639CF77

About this manual

The RA30H4552M1 is a 30 W silicon RF power module designed for 12.5 V mobile radios operating in the 450‑520 MHz band. It uses enhancement‑mode MOSFET transistors and offers low‑power control current (Ieg≈1 mA) for both non‑linear FM and linear AM modulation.

The datasheet lists maximum ratings, electrical characteristics, typical performance curves, and mechanical dimensions (67 × 19.4 × 9.9 mm). Recommended mounting includes M3 screws tightened to 4.0‑6.0 kgf‑cm and an athermal compound between the module and heat sink. The module is RoHS compliant and includes safety and ESD precautions.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Electrical Characteristics
  • Typical Performance
  • Recommendations and Application Information
  • Oscillation
  • Precautions for the Use of Mitsubishi Silicon RF Power Devices

Specifications

Frequency Range450‑520 MHz
Output Power30 W
Total Efficiency42 %
Gate Current (typical)1 mA
Module Size67 × 19.4 × 9.9 mm
Low‑Power Control Current1 mA (typ) @ Vaq=5 V

Frequently asked questions

What mounting torque is recommended for the screws?

M3 screws should be tightened to a torque of 4.0 to 6.0 kgf‑cm.

Is the RA30H4552M1 module RoHS compliant?

Yes, the RA30H4552M1 is a RoHS compliant product.

What is the maximum case temperature recommended for long‑term reliability?

The module case temperature should be kept below 90 °C for long‑term reliability (maximum rating 175 °C).

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