Key facts
- Brand
- IXYS
- Model
- 60N60
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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IXYS IXGN 60N60 IGBT Preliminary Data Sheet
This document is a preliminary datasheet for the IXYS IXGN 60N60 Insulated Gate Bipolar Transistor (IGBT). The device utilizes an international standard SOT-227B miniBLOC package with aluminum nitride isolation, designed for high power dissipation and easy mounting. Key features include very high current capability, fast switching speeds, low collector-to-case capacitance, and a MOS gate turn-on drive simplicity.
Read onlineIXYS 60N60 specifications
| Collector-Emitter Voltage (Vceo) | 600 V |
|---|---|
| Continuous Collector Current (Ic) | 100 A |
| Package Type | SOT-227B miniBLOC |
| Isolation Voltage | 3000 V~ |
| Weight | 30 g |
All IXYS 60N60 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating temperature range?
The device operates from -55°C to +150°C.
Does this IGBT support dual emitter terminals?
Yes, either emitter terminal can be used as the Main or Kelvin Emitter.
What are the available package types for this IGBT?
The device is available in TO-247 AD, TO-264, and TO-268 packages.
From: IXYS IXGH60N60/IXGK60N60/IXGT60N60 IGBT Transistor Datasheet
What are the primary applications for this transistor?
It is designed for AC motor speed control, DC servo and robot drives, DC choppers, and UPS systems.
From: IXYS IXGH60N60/IXGK60N60/IXGT60N60 IGBT Transistor Datasheet