Key facts
- Brand
- IXYS
- Model
- IXFK 27N80
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 handbook
This document provides technical specifications for the IXFK and IXFN series of N-channel enhancement mode Power MOSFETs. The devices feature an avalanche rating, high dv/dt capability, and are available in 800V voltage ratings with currents up to 27A.
The datasheet details electrical characteristics such as threshold voltage, on-resistance, and capacitance for both the TO-264 AA (IXFK) and miniBLOC SOT-227 B (IXFN) packages. It also includes graphical data regarding output characteristics, thermal resistance, gate charge, and intrinsic diode forward voltage drop.
IXYS IXFK 27N80 specifications
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current | 27 A |
| Package Type | TO-264 |
| Operating Temperature Range | -55...+150 °C |
| Gate-Source Threshold Voltage | 2.0 V (typ) |
All IXYS IXFK 27N80 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the main features of the IXFK 27N80Q?
The device features low gate charge and capacitances for easier driving and faster switching, along with an avalanche rating for unclamped inductive load switching.
What are the recommended applications for this MOSFET?
It is suitable for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, and AC motor control.