Key facts
- Brand
- IXYS
- Model
- 30N60BD1
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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IXYS IXGH 30N60BD1/IXGT 30N60BD1 handbook
This document describes the features and characteristics of the HiPerFASTTM IGBT TO-268 model produced by IXYS. The product is a device that integrates IGBT and anti-parallel FRED diode, with high current handling capability and moderate frequency characteristics. It adopts the latest generation HDMOSTM process and has advantages such as simple MOS gate turn-on drive. It is suitable for applications such as AC motor speed control, DC servo and robot drives, DC choppers, uninterruptible power supplies (UPS), and switch-mode and resonant-mode power supplies.
Read onlineIXYS 30N60BD1 specifications
| Collector-Emitter Voltage (VCE) | 600 V |
|---|---|
| Continuous Collector Current (IC) at TC=25°C | 55 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) typ. | 2.0 V |
| Turn-Off Time (tfi) | 140 ns |
| Thermal Resistance Junction-to-Case (TO-247) | 0.62 K/W |
Source: IXYS IXSH/IXSK/IXST 30N60BD1 High Speed IGBT Datasheet
All IXYS 30N60BD1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical saturation voltage when the gate-emitter voltage is 15 V and the collector current is rated?
The typical saturation voltage is 2.0 V under those conditions.
From: IXYS IXSH/IXSK/IXST 30N60BD1 High Speed IGBT Datasheet
What mounting torque should be applied to the device?
You must apply a mounting torque of 1.13 Nm or 10 lb.in.
From: IXYS IXSH/IXSK/IXST 30N60BD1 High Speed IGBT Datasheet