Key facts
- Brand
- IXYS
- Model
- 40N30
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-11
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DatasheetIXYS IXGH 40N30/S IXGH 40N30A/S IXGH 40N30B/S handbook
IXYS 40N30 specifications
| Drain-Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) | 40 A |
| Power Dissipation (PD) | 300 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| On-Resistance (RDS(on)) | 80 mΩ |
| Reverse Recovery Time (trr) | < 200 ns |
All IXYS 40N30 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the typical applications for this MOSFET?
Typical applications include DC-DC converters, synchronous rectification, battery chargers, and AC motor control.
Is this device rated for Unclamped Inductive Switching?
Yes, the device is UIS rated.
What is the maximum continuous drain current for the IXTH 35N30 model?
The maximum continuous drain current at a case temperature of 25°C is 35 A.
What is the maximum power dissipation rating for these MOSFETs?
The device can dissipate a maximum of 300 W at a case temperature of 25°C.