Key facts
- Brand
- IXYS
- Model
- 50N50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-09
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IXYS IXFX 50N50 Datasheet
Datasheet 4 pages · 92 KB · EN
This datasheet presents the key specifications of the IXYS IXFX 50N50 power MOSFET, including maximum voltage, current ratings, thermal limits, and mechanical dimensions. It also lists typical features such as the PLUS 247™ package and low inductance design.
Graphs illustrate output characteristics, gate charge, capacitance, and safe operating area across temperature ranges, while tables give detailed test conditions and characteristic values for designers.
IXYS 50N50 specifications
| Drain‑Source Voltage (V_DSS) max | 500 V |
|---|---|
| Continuous Drain Current (I_D) at 25°C | 50 A |
| Pulsed Drain Current (I_D) at 25°C | 200 A |
| Operating Temperature Range | -55 °C to +150 °C |
| Package Weight | 6 g |
| Mounting Torque | 1.13840 N·m |
| Package Type | PLUS 247™ clip or spring mounting |
Source: IXYS IXFX 50N50 Datasheet
All IXYS 50N50 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the IXFX 50N50?
The device is rated for a maximum V_DSS of 500 V.
What continuous drain current can the IXFX 50N50 handle at 25 °C?
It can conduct up to 50 A continuously at 25 °C.