Key facts
- Brand
- IXYS
- Model
- IXFH26N50
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS Power MOSFET Preliminary Data Sheet
This document provides preliminary technical data for the IXFH 26N50P, IXFV 26N50P, and IXFV 26N50PS Power MOSFETs manufactured by IXYS. The devices are available in TO-247 and PLUS220/PLUS220SMD packages and feature fast intrinsic diodes, low package inductance, and avalanche ratings suitable for unclamped inductive switching applications.
Read onlineIXYS IXFH26N50 specifications
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Drain-Source On-Resistance (RDS(on)) | 230 mΩ |
| Gate Charge (Qg) | 40 nC |
| Operating Junction Temperature (Tj) | -55 to +150 °C |
Source: IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS Power MOSFET Preliminary Data Sheet
All IXYS IXFH26N50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage?
The maximum drain-source voltage is 500 V.
From: IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS Power MOSFET Preliminary Data Sheet
Are these MOSFETs avalanche rated?
Yes, the devices are avalanche rated.
From: IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS Power MOSFET Preliminary Data Sheet
What is the maximum continuous drain current for the 21N50 model at 25°C?
The maximum continuous drain current is 21 A.
From: IXYS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 HiPerFET Power MOSFETs
What is the maximum drain-to-source voltage rating for these MOSFETs?
The maximum drain-to-source voltage is 500 V.
From: IXYS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 HiPerFET Power MOSFETs