Key facts
- Brand
- IXYS
- Model
- IXFH21N50
- Category
- Other Electronics
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH 21N50Q/IXFT 21N50Q Power MOSFET Datasheet
This document is a datasheet for the IXYS IXFH 21N50Q and IXFT 21N50Q, which are N-Channel Enhancement Mode Power MOSFETs in the HiPerFET™ Q-Class family. These devices are designed with an advanced low Qg process to offer low gate charge and capacitances, facilitating easier driving and faster switching speeds.
Read onlineIXYS IXFH21N50 specifications
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current | 21 A |
| Pulse Drain Current | 84 A |
| Power Dissipation | 280 W |
| Operating Junction Temperature | -55 to +150 °C |
| On-Resistance (Typical) | 0.25 Ω |
| Package Types | TO-247, TO-268 |
All IXYS IXFH21N50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating temperature?
The operating junction temperature range is from -55°C to +150°C.
What is the typical on-resistance?
The typical on-resistance (Rds(on)) is 0.25 Ω when Vgs is 10V and Id is 0.5 times the continuous current.
What is the maximum continuous drain current for the 21N50 model at 25°C?
The maximum continuous drain current is 21 A.
From: IXYS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 HiPerFET Power MOSFETs
What is the maximum drain-to-source voltage rating for these MOSFETs?
The maximum drain-to-source voltage is 500 V.
From: IXYS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 HiPerFET Power MOSFETs
What is the maximum drain‑source voltage rating?
The MOSFETs are rated for a maximum drain‑source voltage of 500 V.
What applications are these MOSFETs suitable for?
They are used in DC‑DC converters, switched‑mode and resonant‑mode power supplies, DC choppers, 13.5 MHz industrial applications, pulse generation, laser drivers, and RF amplifiers.