Key facts
- Brand
- IXYS
- Model
- 6N100
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH/IXFM6N90 IXFH/IXFM6N100 handbook
Datasheet 4 pages · 76 KB · EN
This document provides technical specifications for the IXYS HiPerFETTM Power MOSFETs, specifically the N-Channel Enhancement Mode devices with model numbers 6N90 and 6N100. It covers maximum ratings, characteristic values, and application information for these components.
Read onlineIXYS 6N100 specifications
| Drain-Source Voltage (VDS) | 900 V (6N90), 1000 V (6N100) |
|---|---|
| Continuous Drain Current (ID) | 6 A |
| Maximum Junction Temperature (TJ) | 150 /G176C |
| Package Types | TO-247 AD (IXFH), TO-204 AA (IXFM) |
| RDS(on) at VGS=10V, ID=0.5A | 1.8 /G87 (6N90), 2.0 /G87 (6N100) |
All IXYS 6N100 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for these MOSFETs?
They are suitable for DC-DC converters, synchronous rectification, battery chargers, and AC motor control.
What is the maximum operating temperature?
The maximum junction temperature is 150 degrees Celsius.