Key facts
- Brand
- IXYS
- Model
- IXFH9N80
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH8N80/IXFH9N80 Power MOSFET Preliminary Data Sheet
Datasheet 4 pages · 203 KB · EN
This document provides preliminary technical specifications for the IXYS HiPerFET IXFH8N80 (8A) and IXFH9N80 (9A) N-channel enhancement mode Power MOSFETs. These devices feature a rugged polysilicon gate cell structure designed for high dv/dt applications with low on-resistance.
Read onlineIXYS IXFH9N80 specifications
| Drain-Source Voltage (Vdss) | 800 V |
|---|---|
| Continuous Drain Current (IXFH8N80) | 8 A |
| Continuous Drain Current (IXFH9N80) | 9 A |
| Operating Temperature Range | -55 to +150 °C |
Source: IXYS IXFH8N80/IXFH9N80 Power MOSFET Preliminary Data Sheet
All IXYS IXFH9N80 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Are these MOSFETs suitable for surface mounting?
Yes, the IXFH9N80 model has a suffix 'S' indicating it is surface mountable.
From: IXYS IXFH8N80/IXFH9N80 Power MOSFET Preliminary Data Sheet
Are these MOSFETs avalanche rated?
Yes, the devices are Avalanche Rated Low Qg.
What is the maximum power dissipation at 25°C?
The maximum power dissipation is 180 W at a temperature of 25°C.