Key facts
- Brand
- IXYS
- Model
- 28N50F
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH 28N50F/IXFT 28N50F Power MOSFET Datasheet
Datasheet 2 pages · 101 KB · EN
This document provides technical information for the IXFH 28N50F and IXFT 28N50F N-Channel Enhancement Mode Power MOSFETs. These devices are designed for high-frequency switching applications, featuring RF capability, avalanche rating, and low intrinsic resistance.
Read onlineIXYS 28N50F specifications
| Drain-Source Voltage (Vdss) | 500 V |
|---|---|
| Continuous Drain Current (Ios) | 28 A |
| Pulse Current (Icp) | 4190 mA |
| Operating Temperature Range | -55 ... +150 °C |
| Package Types | TO-247 AD (IXFH) / TO-268 (IXFT) |
All IXYS 28N50F documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating temperature?
The maximum operating temperature is +150 °C.
What is the maximum voltage rating of the IXFH 28N50F MOSFET?
The device is rated for a drain‑source voltage of 500 V.
What continuous drain current can the IXFH 28N50F handle?
It can conduct up to 28 A continuously at 25 °C.