Key facts
- Brand
- IXYS
- Model
- IXFT26N60
- Category
- Power Management
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH26N60/IXFT26N60/IXFK28N60 Power MOSFET Datasheet
This document provides technical data for three specific models of High dv/dt, Low trr Power MOSFETs: the IXFH26N60, IXFT26N60, and IXFK28N60. These devices feature an N-Channel Enhancement Mode structure with avalanche energy and current ratings.
Read onlineIXYS IXFT26N60 specifications
| VDS (Drain-Source Voltage) | 600 V |
|---|---|
| ID (Continuous Drain Current) | 26 A or 28 A |
| RDS(on) (On-Resistance) | 0.25 /G87 |
| trr (Reverse Recovery Time) | 250 ns |
| TJ (Operating Junction Temperature) | -55 ... +150 /G176C |
Source: IXYS IXFH26N60/IXFT26N60/IXFK28N60 Power MOSFET Datasheet
All IXYS IXFT26N60 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating junction temperature?
The maximum operating junction temperature (TJ) ranges from -55 to +150 degrees Celsius.
From: IXYS IXFH26N60/IXFT26N60/IXFK28N60 Power MOSFET Datasheet
What are the available package types?
The devices are available in TO-247 AD (IXFH), TO-268 (D3) (IXFT), and TO-264 AA (IXFK) packages.
From: IXYS IXFH26N60/IXFT26N60/IXFK28N60 Power MOSFET Datasheet
What is the package type for the IXFH 26N60Q?
The IXFH 26N60Q is available in the TO-247 package.
What is the package type for the IXFT 26N60Q?
The IXFT 26N60Q is available in the TO-268 package.