Key facts
- Brand
- IXYS
- Model
- IXFH20N80Q
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH20N80Q/IXFK20N80Q/IXFT20N80Q HiPerFET Power MOSFET Datasheet
This document provides technical specifications for the IXYS HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode series, specifically the IXFH20N80Q, IXFK20N80Q, and IXFT20N80Q models. It details maximum ratings, characteristic values, and advanced technical information including electrical parameters such as drain-source voltage, on-resistance, and switching times.
Read onlineIXYS IXFH20N80Q specifications
| Drain-Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| On-Resistance (RDS(on)) | 0.42 Ohms |
| Operating Junction Temperature (TJ) | -55 to +150 C |
| Package Types | TO-247, TO-264, TO-268 |
Source: IXYS IXFH20N80Q/IXFK20N80Q/IXFT20N80Q HiPerFET Power MOSFET Datasheet
All IXYS IXFH20N80Q documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the specific models covered in this datasheet?
The document covers the IXFH20N80Q, IXFK20N80Q, and IXFT20N80Q models.
From: IXYS IXFH20N80Q/IXFK20N80Q/IXFT20N80Q HiPerFET Power MOSFET Datasheet
What is the maximum drain-source voltage?
The maximum drain-source voltage is 800 V.
From: IXYS IXFH20N80Q/IXFK20N80Q/IXFT20N80Q HiPerFET Power MOSFET Datasheet
What is the maximum drain‑source voltage of the IXFH20N80Q?
The device is rated for a maximum drain‑source voltage of 800 V.
What continuous drain current can the IXFH20N80Q handle?
It can carry a continuous drain current of 20 A at 25 °C.