Key facts
- Brand
- IXYS
- Model
- 01N100
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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IXYS 01N100 High Voltage MOSFET Datasheet
This document provides a technical overview of the IXYS 01N100 High Voltage MOSFET. It is an N-channel, enhancement mode device with a maximum drain-source voltage (VDSS) of 1000 V and a maximum continuous drain current (ID25) of 100 mA.
The datasheet includes comprehensive electrical characteristics such as threshold voltage, on-resistance, and switching times. It also lists maximum ratings for voltage and temperature, along with detailed mechanical dimensions for the TO-251 AA and TO-252 AA packages.
IXYS 01N100 specifications
| Max Drain-Source Voltage (VDSS) | 1000 V |
|---|---|
| Max Continuous Drain Current (ID25) | 100 mA |
| On-Resistance (RDS(on)) | 80 mΩ |
| Operating Temperature Range (TJ) | -55 ... +150 °C |
| Package Types | TO-251 AA, TO-252 AA |
All IXYS 01N100 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for this MOSFET?
The device is suitable for level shifting, triggers, solid state relays, and current regulators.
What is the maximum gate-source voltage?
The continuous gate-source voltage rating is ±20 V, with a transient limit of ±30 V.
What are the applications for this MOSFET?
The device is suitable for level shifting, triggers, solid state relays, and current regulators.
What are the pin assignments?
Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source, and Pin 4 is Drain Bottom Side.