Key facts
- Brand
- IXYS
- Model
- 26N60Q
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFK 26N60Q/IXFX 26N60Q Advance Technical Information
Datasheet 2 pages · 101 KB · EN
This document provides advance technical information for the IXYS IXFK 26N60Q and IXFX 26N60Q N-Channel Enhancement Mode Power MOSFETs. These devices utilize the HiPerFET™ process and are designed with a rugged polysilicon gate cell structure.
Read onlineIXYS 26N60Q specifications
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current | 26 A |
| Pulse Drain Current | 104 A |
| Package Type | TO-264 |
| Operating Temperature Range | -55 ... +150 °C |
Source: IXYS IXFK 26N60Q/IXFX 26N60Q Advance Technical Information
All IXYS 26N60Q documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum power dissipation rating at 25°C?
The maximum power dissipation is rated at 360 W when the temperature is 25°C.
From: IXYS IXFK 26N60Q/IXFX 26N60Q Advance Technical Information
What is the package type for the IXFH 26N60Q?
The IXFH 26N60Q is available in the TO-247 package.
What is the package type for the IXFT 26N60Q?
The IXFT 26N60Q is available in the TO-268 package.