Key facts
- Brand
- IXYS
- Model
- 3N120
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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IXYS IXTA/IXTP 3N120/3N110 High Voltage Power MOSFET Preliminary Data Sheet
Datasheet 4 pages · 105 KB · EN
This document is a preliminary datasheet for the IXTA/IXTP 3N120 and IXTA/IXTP 3N110 series of high voltage power MOSFETs. These N-Channel Enhancement Mode devices are avalanche rated and designed for high dv/dt applications.
Read onlineIXYS 3N120 specifications
| Voss (Max) | 1200 V / 1100 V |
|---|---|
| P, (Max) | 150 W |
| Tay (Max) | 150 °C |
Source: IXYS IXTA/IXTP 3N120/3N110 High Voltage Power MOSFET Preliminary Data Sheet
All IXYS 3N120 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.