Key facts
- Brand
- IXYS
- Model
- IXGT15N120C
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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IXYS IXGH/IXGT 15N120BD1/15N120CD1 Preliminary Data
This document provides preliminary technical data for the IXGH/IXGT 15N120BD1 and 15N120CD1 series of high-speed IGBTs with integrated diodes. These devices feature a MOS gate turn-on mechanism and combine an IGBT with an anti-parallel Fast Recovery Epitaxial Diode (FRED) in a single package.
Read onlineIXYS IXGT15N120C specifications
| Collector-Emitter Saturation Voltage (VCE(sat)) | 3.8 V |
|---|---|
| Turn-Off Time (tfi) | 115 ns |
| Thermal Resistance Junction-to-Case (RthJC) | 0.83 K/W |
All IXYS IXGT15N120C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for these IGBTs?
They are suitable for AC motor speed control, DC servo and robot drives, DC choppers, and various power supplies.
What is the mounting torque specification?
The mounting torque is specified as 1.13 Nm or 10 lb.in.
What is the maximum continuous collector current at 25°C?
The maximum continuous collector current is 30 A.
What is the typical turn-on delay time for this device?
The typical turn-on delay time is 25 ns.
