Key facts
- Brand
- IXYS
- Model
- 20N60
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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DatasheetIXYS IXTH 20N60 handbook
IXYS 20N60 specifications
| Maximum Drain‑Source Voltage (VDSS) | 600 V |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| Typical On‑Resistance (RDS(on)) | 0.35 Ω |
| Input Capacitance (Ciss) | 4500 pF |
| Output Capacitance (Coss) | 420 pF |
| Thermal Resistance Junction‑to‑Case (RthJC) | 0.42 K/W |
| Package Weight (TO‑247) | 6 g |
All IXYS 20N60 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The MOSFETs are rated for a maximum drain‑source voltage of 600 V.
What is the typical on‑resistance at VGS = 10 V?
The typical on‑resistance is 0.35 Ω.