Key facts
- Brand
- IXYS
- Model
- 11P50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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IXYS IXTH11P50/IXTT11P50 Power MOSFET Datasheet
Datasheet 4 pages · 569 KB · EN
This document provides a comprehensive technical overview of the IXYS IXTH11P50 and IXTT11P50 P-channel enhancement mode power MOSFETs. It details maximum ratings such as drain-source voltage (-500 V) and continuous current (-11 A), along with key electrical characteristics including on-resistance, threshold voltage, and switching times.
Read onlineIXYS 11P50 specifications
| Drain-Source Voltage (VDS) | -500 V |
|---|---|
| Continuous Drain Current (ID) | -11 A |
| Power Dissipation (PD) | 300 W |
| On-Resistance (RDS(on)) | 0.75 Ω |
| Package Type TO-247 Weight | 6 g |
All IXYS 11P50 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature?
The maximum junction temperature (TJ) is +150 °C.
Is this device avalanche rated?
Yes, the device features Unclamped Inductive Switching (UIS) rating.
What are the available package styles for these MOSFETs?
The devices are available in TO-247 AD (IXTH) and TO-268 (IXTT) packages.
What is the maximum lead temperature for soldering?
The maximum lead temperature is 300 °C at a distance of 1.6 mm from the case for 10 seconds.