Key facts
- Brand
- IXYS
- Model
- 30N50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH/IXFT 30N50/32N50 Power MOSFET Datasheet
Datasheet 4 pages · 106 KB · EN
This document provides technical specifications and characteristics for the IXFH/IXFT 30N50 and IXFH/IXFT 32N50 N-Channel Enhancement Mode Power MOSFETs. These devices belong to the HDMOS™ Family and utilize a rugged polysilicon gate cell structure.
Read onlineIXYS 30N50 specifications
| Drain-Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) | 30 A (30N50), 32 A (32N50) |
| Peak Pulse Drain Current (I_DM) | 120 A (30N50), 128 A (32N50) |
| Power Dissipation (P_D) | 360 W |
| Operating Junction Temperature Range | -55°C to +150°C |
| Package Types | TO-247 AD (IXFH), TO-268 (D3) |
All IXYS 30N50 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for these MOSFETs?
They are suitable for DC-DC converters, battery chargers, switched-mode power supplies, and AC motor control.
What is the maximum operating temperature?
The maximum operating junction temperature is 150°C.
What are the applications for this FET?
It is suitable for switch-mode and resonant-mode power supplies, motor controls, and DC choppers.
What is the mounting torque specification?
The recommended mounting torque is 1.13 Nm or 10 lb.in.