Key facts
- Brand
- IXYS
- Model
- 50N60B
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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IXYS IXGN 50N60B IGBT Datasheet
This document is a preliminary datasheet for the IXYS IXGN 50N60B, a HiPerFAST IGBT housed in a SOT-227B miniBLOC package. Key specifications include a collector-emitter voltage (VCE) of 600 V and a continuous collector current (IC25) of 75 A at 25°C. The device features low saturation voltage and low collector-to-case capacitance, making it suitable for high-power switching applications.
Read onlineIXYS 50N60B specifications
| Collector-Emitter Saturation Voltage | 2.5 V |
|---|---|
| Package Type | SOT-227B miniBLOC |
| Isolation Voltage | 3000 V~ |
| Thermal Resistance Junction-to-Case | 0.50 K/W |
Source: IXYS IXGN 50N60B IGBT Datasheet
All IXYS 50N60B documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Can either emitter terminal be used as Main or Kelvin Emitter?
Yes, the document states that either emitter terminal can be used as Main or Kelvin Emitter.
What are the recommended applications for this IGBT?
Recommended applications include AC motor speed control, DC servo and robot drives, DC choppers, and UPS systems.
What is the maximum junction temperature?
The maximum operating junction temperature is 150 °C.
What is the maximum collector-emitter voltage rating for these IGBTs?
The maximum collector-emitter voltage is 600 V.