Key facts
- Brand
- IXYS
- Model
- 26N50P
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS Power MOSFET Preliminary Data Sheet
This document provides preliminary technical data for the IXFH 26N50P, IXFV 26N50P, and IXFV 26N50PS Power MOSFETs manufactured by IXYS. The devices are available in TO-247 and PLUS220/PLUS220SMD packages and feature fast intrinsic diodes, low package inductance, and avalanche ratings suitable for unclamped inductive switching applications.
Read onlineIXYS 26N50P specifications
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Drain-Source On-Resistance (RDS(on)) | 230 mΩ |
| Gate Charge (Qg) | 40 nC |
| Operating Junction Temperature (Tj) | -55 to +150 °C |
Source: IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS Power MOSFET Preliminary Data Sheet
All IXYS 26N50P documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage?
The maximum drain-source voltage is 500 V.
From: IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS Power MOSFET Preliminary Data Sheet
Are these MOSFETs avalanche rated?
Yes, the devices are avalanche rated.
From: IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS Power MOSFET Preliminary Data Sheet
What are the applications for this MOSFET?
The device is suitable for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, and AC motor control.