IXGN 60N60 is a ultra-low Vce(sat) IGBT produced by IXYS company. Its maximum voltage can reach 600V, and its maximum current can reach 100A. Vce(sat) is only 1.7V.
This document is a preliminary datasheet for the IXYS IXGN 60N60 Insulated Gate Bipolar Transistor (IGBT). The device utilizes an international standard SOT-227B miniBLOC package with aluminum nitride isolation, designed for high power dissipation and easy mounting. Key features include very high current capability, fast switching speeds, low collector-to-case capacitance, and a MOS gate turn-on drive simplicity.
| Collector-Emitter Voltage (Vceo) | 600 V |
|---|---|
| Continuous Collector Current (Ic) | 100 A |
| Package Type | SOT-227B miniBLOC |
| Isolation Voltage | 3000 V~ |
| Weight | 30 g |
The device operates from -55°C to +150°C.
Yes, either emitter terminal can be used as the Main or Kelvin Emitter.