Key facts
- Brand
- IXYS
- Model
- IXFH16N90
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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IXYS IXFH16N90/IXFX16N90 Power MOSFET Preliminary Data Sheet
Datasheet 2 pages · 266 KB · EN
This document provides preliminary technical specifications for the IXYS HiPerFET™ family of N-Channel Enhancement Mode Power MOSFETs, specifically models IXFH16N90 and IXFX16N90. These devices utilize a rugged polysilicon gate cell structure and are designed for high dv/dt applications with low on-resistance.
Read onlineIXYS IXFH16N90 specifications
| Drain-Source Voltage (Vdss) | 900 V |
|---|---|
| Continuous Drain Current (Ic) | 16 A |
| Package Type | TO-247 AD / PLUS 247™ |
| Operating Temperature Range | -55 ... +150 °C |
Source: IXYS IXFH16N90/IXFX16N90 Power MOSFET Preliminary Data Sheet
All IXYS IXFH16N90 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the model numbers covered in this datasheet?
The document covers IXFH 16N90Q, IXFK 16N90Q, and IXFT 16N90Q.
What is the maximum operating temperature?
The maximum junction temperature (TJ) is +150 °C.