Key facts
- Brand
- IXYS
- Model
- 40N60C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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IXYS IXGR 40N60C IXGR 40N60CD1 HiPerFAST IGBT ISOPLUS247 (Electrically Isolated Backside) handbook
This document is a technical datasheet for the IXYS IXGR 40N60C and IXGR 40N60CD1 High Power (HiPerFAST) Insulated Gate Bipolar Transistors (IGBTs). These devices utilize ISOPLUS247 technology, which provides an electrically isolated backside to facilitate easier assembly and reduce parasitic inductance. The datasheet covers key electrical characteristics such as collector-emitter voltage, current ratings, and switching times under specific test conditions.
Read onlineIXYS 40N60C specifications
| Collector-Emitter Voltage (VCES) | 600 V |
|---|---|
| Continuous Collector Current (IT) | 40 A |
| Input Capacitance (Cies) | 3300 pF |
| Output Capacitance (Coes) | 310 pF |
| Turn-on Delay Time (td(on)) | 25 ns typ. |
| Turn-off Fall Time (tfi) | 75 ns typ. |
| Thermal Resistance Junction-to-Case (RthJC) | 0.6 K/W |
Source: IXYS IXGR 40N60C IXGR 40N60CD1 HiPerFAST IGBT ISOPLUS247 (Electrically Isolated Backside) handbook
All IXYS 40N60C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the main feature of these IGBTs?
They utilize ISOPLUS247 technology which provides an electrically isolated backside.
From: IXYS IXGR 40N60C IXGR 40N60CD1 HiPerFAST IGBT ISOPLUS247 (Electrically Isolated Backside) handbook
What is the rated collector current?
The typical continuous collector current (IT) is 40 A.
From: IXYS IXGR 40N60C IXGR 40N60CD1 HiPerFAST IGBT ISOPLUS247 (Electrically Isolated Backside) handbook
What is the maximum drain‑source voltage of the IXKR 40N60C?
The device is rated for a maximum drain‑source voltage of 600 V.
What continuous drain current can the IXKR 40N60C handle?
It can continuously conduct up to 38 A of drain current.