This document introduces the HiPerFASTTM IGBT ISOPLUS247TM product features, including voltage range, current range, saturation voltage, switching loss, etc.
This document is a technical datasheet for the IXYS IXGR 40N60C and IXGR 40N60CD1 High Power (HiPerFAST) Insulated Gate Bipolar Transistors (IGBTs). These devices utilize ISOPLUS247 technology, which provides an electrically isolated backside to facilitate easier assembly and reduce parasitic inductance. The datasheet covers key electrical characteristics such as collector-emitter voltage, current ratings, and switching times under specific test conditions.
| Collector-Emitter Voltage (VCES) | 600 V |
|---|---|
| Continuous Collector Current (IT) | 40 A |
| Input Capacitance (Cies) | 3300 pF |
| Output Capacitance (Coes) | 310 pF |
| Turn-on Delay Time (td(on)) | 25 ns typ. |
| Turn-off Fall Time (tfi) | 75 ns typ. |
| Thermal Resistance Junction-to-Case (RthJC) | 0.6 K/W |
They utilize ISOPLUS247 technology which provides an electrically isolated backside.
The typical continuous collector current (IT) is 40 A.