IXKR 40N60C is a N-channel enhancement mode low RDSon, high VDSS MOSFET in ISOPLUS247TM package with electrically isolated base.
The IXKR 40N60C is a N‑channel enhancement‑mode power MOSFET offered in the ISOPLUS247™ package with an electrically isolated base. It features low coupling capacitance to the heatsink, high power dissipation capability, and a low thermal resistance design, making it suitable for high‑frequency switching applications.
The device is rated for a maximum drain‑source voltage of 600 V, continuous drain current of 38 A, and a gate charge of 70 mA. It operates over a temperature range of –40 °C to +150 °C, and its package dimensions and mechanical specifications are detailed in the outline section.
| Drain‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current (I_D) | 38 A |
| Gate Charge (Qg) | 70 mA |
| Package | ISOPLUS247™ with DCB base |
| Operating Temperature Range | -40 °C to +150 °C |
| Weight | 6 g |
| Dimension A (length) | 4.83 mm – 5.21 mm |
The device is rated for a maximum drain‑source voltage of 600 V.
It can continuously conduct up to 38 A of drain current.
It is supplied in the ISOPLUS247™ package with an electrically isolated DCB base.
The MOSFET operates from –40 °C up to +150 °C.