IXYS IXSH/IXSK/IXST 30N60BD1 High Speed IGBT Datasheet

This data sheet provides the characteristics parameters of IXYS IXSH series 600V IGBT.

Brand: IXYS
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 5
File format: PDF
File size: 119 KB
Published: 07 June, 2012
Updated: 30 September, 2023
Models: 30N60BD1, 30N60
MD5 checksum: FACC8F2B0ABF3A38D0B8702D4928C7C2
PDF: IXYS IXSH/IXSK/IXST 30N60BD1 High Speed IGBT Datasheet PDF

About this manual

This document is a technical datasheet for the IXYS IXSH 30N60BD1, IXSK 30N60BD1, and IXST 30N60BD1 high-speed IGBTs with integrated diodes. The devices are available in TO-247AD (IXSH), TO-268 (IXST), and TO-264 (IXSK) packages.

What's inside

Maximum Ratings
Electrical Characteristics
Reverse Diode Characteristics
Package Outlines
Application Information

Specifications

Collector-Emitter Voltage (VCE)	600 V
Continuous Collector Current (IC) at TC=25°C	55 A
Collector-Emitter Saturation Voltage (VCE(sat)) typ.	2.0 V
Turn-Off Time (tfi)	140 ns
Thermal Resistance Junction-to-Case (TO-247)	0.62 K/W

Frequently asked questions

What is the typical saturation voltage when the gate-emitter voltage is 15 V and the collector current is rated?

The typical saturation voltage is 2.0 V under those conditions.

What mounting torque should be applied to the device?

You must apply a mounting torque of 1.13 Nm or 10 lb.in.

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