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The FQPF2N90 is a 900 V N‑channel enhancement‑mode power MOSFET fabricated with Fairchild's planar stripe DMOS technology. It is designed for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for high‑efficiency switch‑mode power supplies.
Key specifications include a 900 V drain‑source breakdown voltage, 14 A continuous drain current at 25 °C, low gate charge (typical 12 nC), and a TO‑220F package with detailed thermal resistance values. The datasheet also contains typical characteristic curves, test circuit diagrams, and safety notices.
| Drain‑Source Voltage (V_DSS) | 900 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 14 A |
| Pulsed Drain Current (I_D) (Note 1) | 5.6 A |
| Gate Charge (Q_G) typical | 12 nC |
| Power Dissipation (P_D) at 25 °C | 35 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.57 °C·W |
| Operating Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 900 V.
It can conduct up to 14 A continuously at a case temperature of 25 °C.
The MOSFET is supplied in a TO‑220F package.
Yes, the device is 100 % avalanche tested.