FDD86102LZ N-Channel PowerTrench® MOSFET is a high-performance MOSFET produced by Fairchild Semiconductor Corporation with a maximum on-state resistance of 22.5 mΩ. It is suitable for applications such as DC-DC conversion, inverters and synchronous rectifiers.
This document is a technical datasheet for the Fairchild Semiconductor FDD86102LZ, an N-Channel PowerTrench MOSFET rated at 100V and 35A. The device utilizes advanced manufacturing processes to minimize on-state resistance and switching loss while offering enhanced ESD protection via a built-in G-S zener.
| Drain to Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Silicon limited) | 35 A |
| Power Dissipation (Tc = 25°C) | 54 W |
| On-Resistance (Vgs=10V, Id=8A) | 22.5 mΩ |
| Operating Junction Temperature Range | -55 to +150 °C |