FDD86102 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET from Fairchild Semiconductor Corporation. Its maximum on-resistance is 24 mΩ, rated working voltage is 100 V, and rated working current is 36 A.
This document is a technical datasheet for the Fairchild Semiconductor FDD86102, an N-Channel PowerTrench MOSFET. The device features a maximum drain current of 36A at Tj=25°C and operates with a drain-to-source voltage rating of 100V.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Gate to Source Voltage (Vgs) | +20 V |
| Power Dissipation (Tc=25°C) | 62 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 2.0 °C/W |
| Package Type | D-PAK (TO-252) |
The device supports a maximum continuous drain current of 36 A when the case temperature is 25 °C.
The MOSFET can dissipate up to 62 W when the junction temperature is maintained at 25 °C.
The device operates and stores within a junction temperature range of -55 to +150 °C.