Key facts
- Brand
- Analog Devices
- Model
- ADG636
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-03
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Analog Devices ADG636 Datasheet Rev B
The ADG636 is a monolithic dual SPDT CMOS switch offering ultralow charge injection (±1.5 pC typical) and very low leakage (100 pA max at 25 °C). It operates from a dual ±2.7 V to ±5.5 V supply or a single +2.7 V to +5.5 V supply and is available in a 14‑lead TSSOP package.
The document provides detailed specifications, pin descriptions, electrical characteristics, test circuits, and ordering information. It also includes revision history, absolute maximum ratings, and mechanical dimensions for design integration.
Analog Devices ADG636 specifications
| Charge Injection | ±1.5 pC typical |
|---|---|
| Leakage Current | 100 pA max at 25 °C |
| On‑Resistance (RON) | 85 Ω typical |
| Supply Voltage (Single) | +2.7 V to +5.5 V |
| Power Consumption | <0.1 µW typical |
| Bandwidth (‑3 dB) | 610 MHz (dual supply) |
| Operating Temperature Range | −40 °C to +125 °C |
All Analog Devices ADG636 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical charge injection of the ADG636?
The ADG636 has a typical charge injection of ±1.5 pC over the full signal range.
What is the on‑resistance of the ADG636?
The on‑resistance is typically 85 Ω.
What is the typical on‑resistance of the ADG636?
The typical on‑resistance is 85 Ω.
How much charge injection does the ADG636 exhibit?
It has a typical charge injection of 1.5 pC.