ADG636 is a monolithic device comprising two independently selected SPST switches, with 1 pC charge injection, 100 pA leakage current, ±5 V/+5 V/+3 V dual SPDT switch, suitable for automatic test equipment, data acquisition systems, battery-powered instruments, communication systems, sample-and-hold systems, remote-powered equipment, audio and video signal routing, relay replacement and avionics.
The ADG636 is a monolithic dual SPDT CMOS switch offering ultralow charge injection (±1.5 pC typical) and very low leakage (100 pA max at 25 °C). It operates from a dual ±2.7 V to ±5.5 V supply or a single +2.7 V to +5.5 V supply and is available in a 14‑lead TSSOP package.
The document provides detailed specifications, pin descriptions, electrical characteristics, test circuits, and ordering information. It also includes revision history, absolute maximum ratings, and mechanical dimensions for design integration.
| Charge Injection | ±1.5 pC typical |
|---|---|
| Leakage Current | 100 pA max at 25 °C |
| On‑Resistance (RON) | 85 Ω typical |
| Supply Voltage (Single) | +2.7 V to +5.5 V |
| Power Consumption | <0.1 µW typical |
| Bandwidth (‑3 dB) | 610 MHz (dual supply) |
| Operating Temperature Range | −40 °C to +125 °C |
The ADG636 has a typical charge injection of ±1.5 pC over the full signal range.
The on‑resistance is typically 85 Ω.
The maximum leakage current is 100 pA at 25 °C.