The ADG636 is a CMOS switch with a maximum operating voltage of ±5.5V, 1pC charge injection, and 100pA leakage current. It has a typical on resistance of 85Ω, supports rail-to-rail operation, and has a fast switching time and low power consumption. The ADG636 is available in a 14-lead TSSOP package and is suitable for applications such as automatic test equipment, data acquisition systems, battery-powered instruments, communication systems, sample-and-hold systems, remote-powered equipment, audio and video signal routing, relay replacement, and avionics.
The ADG636 is a monolithic dual SPDT CMOS switch that operates from a dual +2.7 V to +5.5 V supply or a single +2.7 V to +5.5 V supply. It offers ultralow charge injection (1.5 pC typical), very low leakage currents (10 pA typical at 25 °C), and a typical on‑resistance of 85 Ω. The device is rated for automotive temperature range (‑40 °C to +125 °C) and is available in a 14‑lead TSSOP package.
The datasheet provides detailed specifications, pin configuration, dynamic characteristics, and ordering information. It includes typical performance graphs, test circuits, and a terminology section to aid designers in integrating the switch into test equipment, data‑acquisition systems, and other signal‑routing applications.
| Supply Voltage (Dual) | +2.7 V to +5.5 V |
|---|---|
| Supply Voltage (Single) | +2.7 V to +5.5 V |
| Typical On‑Resistance (Ron) | 85 Ω |
| Typical Leakage Current | 10 pA at 25 °C |
| Charge Injection | 1.5 pC typical |
| Operating Temperature Range | ‑40 °C to +125 °C |
| Bandwidth (‑3 dB) | 610 MHz (dual supply) |
The typical on‑resistance is 85 Ω.
It has a typical charge injection of 1.5 pC.
The leakage current is typically 10 pA at 25 °C.
The device works from a dual +2.7 V to +5.5 V supply or a single +2.7 V to +5.5 V supply.