This file is the MPS4250/D's device characteristics datasheet, which introduces the product's maximum ratings, thermal characteristics, electrical characteristics, etc.
This document is a technical datasheet for the Motorola MPS4250, a PNP silicon transistor. It provides comprehensive data on maximum ratings, including collector-emitter voltage of -40 Vdc and total device dissipation up to 625 mW depending on the package style (TO-92 or TO-226AA).
The datasheet also lists electrical characteristics such as DC current gain ranging from 800 to 250, small-signal parameters like output capacitance of 6.0 pF, and thermal resistance values. Package dimensions for the TO-92 (TO-226AA) style are included with specific lead spacing and body size measurements.
| Collector-Emitter Voltage (VCEO) | -40 Vdc |
|---|---|
| Total Device Dissipation @ Ta = 25°C (TO-92) | 625 mW |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Ambient (Rea) | 200 °C/W |
The maximum continuous collector current is 10 mA.
The device operates and stores between -55°C and +150°C.
The maximum total device dissipation is 625 mW.