motorola tmos power mosfet transistor device data
This document is a Designer's Data Sheet for the Motorola MMSF3P03HD, a MiniMOS™ P-Channel Field Effect Transistor. These devices utilize Motorola's High Cell Density HDTMOS process to offer ultra-low on-resistance and true logic-level performance in a miniature SO-8 surface mount package. They are designed for low-voltage, high-speed switching applications such as DC-DC converters and power management in portable products.
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drain Current - Continuous | 3.0 A |
| Operating Temperature Range | -55 to 150 °C |
| On-Resistance (Typical) | 0.1 Ohm |
| Package Type | CASE 751-05, Style 13 |
The typical on-resistance is 0.1 Ohm.
The maximum continuous drain current at 25°C is 4.6 Amperes.
The operating and storage temperature range is from -55 to 150 °C.