RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
The RDO2MUS1B is a silicon RF power MOSFET transistor designed for VHF/UHF RF power amplifier applications, such as mobile radio sets. It offers high power gain (Pout > 2 W, Gp > 16 dB) and typical efficiency of 65 % at 175 MHz and 520 MHz.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameter data, and safety precautions. Key parameters include a 30 V drain‑source rating, 1.5 A drain current, and a junction temperature limit of 150 °C. Users are advised to keep the device temperature low, use appropriate heat‑sinks, and follow RoHS and ESD guidelines.
| Drain‑to‑source voltage (V_DSS) | 30 V |
|---|---|
| Gate‑to‑source voltage (V_GSS) | ±20 V |
| Drain current (I_D) | 1.5 A |
| Junction temperature (Tj) | 150 °C |
| Thermal resistance (Rth_j‑c) | 5.7 °C/W |
| Typical output power at 175 MHz | 2 W |
| Typical efficiency at 175 MHz | 65 % |
The maximum drain‑to‑source voltage is 30 V.
The device can deliver about 2 W of output power at 175 MHz.