This application note provides the RF wide band characteristics data (Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at 135-175MHz band of RD01MUS2 and RD07MUS2B.
The document presents measured RF characteristics of the RDO1MUS2 and RDO7MUS2B silicon RF power semiconductors. It includes frequency response, output power versus input power, output power versus gate voltage, and output power versus supply voltage, all evaluated at Vdd = 7.2 V and Vgg = 3.5 V.
Data are shown in tables and graphs for the 135‑175 MHz band, and an equivalent circuit is provided. A parts list with component values and manufacturers is included at the end of the note.
| Frequency range | 135 MHz to 175 MHz |
|---|---|
| Supply voltage (Vdd) | 7.2 V |
| Gate voltage (Vgg) | 3.5 V |
| Quiescent current (Idq) | 405 mA |
The measurements cover 135 MHz to 175 MHz.
The supply voltage was Vdd = 7.2 V.
A gate voltage of Vgg = 3.5 V was used.
The quiescent current is 405 mA.